M16C6C Datasheet, PDF (52/94 Pages) Renesas Technology Corp – RENESAS MCU

M16C/6C Group
5. Electrical Characteristics
5.1.6 Flash Memory Electrical Characteristics
Table 5.9 CPU Clock When Operating Flash Memory (f_(BCLK))
Symbol
Parameter
Conditions
-
f(SLO
W_R)
-
-
CPU rewrite mode
Slow read mode
Low current consumption read mode
Data flash read
2.7 V ≤ V_CC1 ≤ 3.0 V
3.0 V < V_CC1 ≤ 5.5 V
Standard
Unit
Min.
Typ.
Max.
10 ⁽¹⁾
MHz
5⁽³⁾
MHz
35
16 ⁽²⁾
20 ⁽²⁾
kHz
MHz
MHz
Notes:
1. Set the PM17 bit in the PM1 register to 1 (one wait).
2. When the frequency is over this value, set the FMR17 bit in the FMR1 register to 0 (one wait) or the PM17 bit in
the PM1 register to 1 (one wait)
3. Set the PM17 bit in the PM1 register to 1(one wait). A wait is not necessary when using 125 kHz on-chip
oscillator clock or sub clock as the CPU clock source.
Table 5.10 Flash Memory (Program ROM 1, 2) Electrical Characteristics
Symbol
-
-
-
-
-
-
-
t_PS
-
Parameter
Program/erase cycles ^{(2, 4, 5)}
Two words program time
Lock bit program time
Block erase time
Program, erase voltage
Conditions
V_CC1 = 3.3 V, T_opr = 25°C
V_CC1 = 3.3 V, T_opr = 25°C
V_CC1 = 3.3 V, T_opr = 25°C
V_CC1 = 3.3 V, T_opr = 25°C
Min.
1,000 ⁽³⁾
2.7
Read voltage
2.7
Program, erase temperature
0
Flash Memory Circuit Stabilization Wait Time
Data hold time ⁽⁷⁾
Ambient temperature = 55°C
Standard
Typ.
Max.
150
4000
70
3000
0.2
3.0
5.5
5.5
60
50
20
Unit
times
μs
μs
s
V
V
°C
μs
year
Notes:
1. V_CC1 = 2.7 to 5.5 V at T_opr = 0 to 60°C (option: -40°C to 85°C), unless otherwise specified.
2. Definition of program and erase cycles
The program and erase cycles refer to the number of per-block erasures.
If the program and erase cycles are n (n=1,000), each block can be erased n times.
For example, if a 4 Kbyte block is erased after writing two word data 1,024 times, each to a different address, this
counts as one program and erase cycles. Data cannot be written to the same address more than once without
erasing the block (rewrite prohibited).
3. Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing
to sequential addresses in turn so that as much of the block as possible is used up before performing an erase
operation. For example, when programming groups of 16 bytes, the effective number of rewrites can be
minimized by programming up to 128 groups before erasing them all in one operation. It is also advisable to
retain data on the erasure cycles of each block and limit the number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the
block erase command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support
representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
REJ03B0277-0100 Rev.1.00 Jul.15, 2009
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