HYB18H512321BF Datasheet, PDF (29/43 Pages) Qimonda AG – 512-Mbit GDDR3 Graphics RAM

Internet Data Sheet
HYB18H512321BF
512-Mbit GDDR3
5.8
Termination IV Characteristic at 120 Ohms
Figure 16 represents the DQ or ADD/CMD termination Pull-Up IV characteristic under process, voltage and temperature best
and worst case conditions. The actual termination Pull-Up current must lie between these two bounding curves. The value of
the external ZQ resistor is 240 Ω, setting the nominal termination impedance to 120 Ω. (Extended Mode Register programmed
to ZQ/2 for DQ terminations or CKE = 0 at the RES transition during Power-Up for ADD/CMD terminations).










FIGURE 16
120 Ohm Active Termination Characteristic
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Table 18 lists the numerical values of the minimum and maximum allowed values of the termination IV characteristic.
Voltage (V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Terminator Pull-Up Current (mA)
Minimum
-0.81
-1.60
-2.34
-3.06
-3.74
-4.39
-5.00
-5.58
-6.12
-6.63
Maximum
-1.09
-2.14
-3.15
-4.12
-5.06
-5.94
-6.79
-7.59
-8.35
-9.06
TABLE 18
Programmed Terminator Characteristics of 120 Ohm
Voltage (V)
Terminator Pull-Up Current (mA)
Minimum
Maximum
1.1
-7.11
-9.72
1.2
-7.57
-10.42
1.3
-8.02
-11.00
1.4
-8.47
-11.67
1.5
-8.91
-12.33
1.6
-9.35
-13.05
1.7
-9.79
-13.75
1.8
-10.22
-14.43
1.9
—
-15.08
2.0
—
-15.69
Rev. 1.1, 2007-09
29
05292007-WAU2-UU95