AR0130 Datasheet, PDF (45/53 Pages) ON Semiconductor – CMOS Digital Image Sensor

AR0130: 1/3-Inch CMOS Digital Image Sensor
Electrical Specifications
Table 14: I/O Fall Slew Rate (1.8V VDD_IO)¹
Parallel Slew Rate
7
6
5
4
3
2
1
0
Conditions
Default
Default
Default
Default
Default
Default
Default
Default
Min
Typ
Max
Units
0.57
0.92
1.55
V/ns
0.40
0.64
1.08
V/ns
0.31
0.50
0.82
V/ns
0.24
0.38
0.61
V/ns
0.18
0.27
0.44
V/ns
0.13
0.19
0.31
V/ns
0.09
0.13
0.20
V/ns
0.05
0.08
0.12
V/ns
Note: 1. Minimum and maximum values are taken at 70°C, 1.7V, and -30°C, 1.95V. The loading used is 10pF.
DC Electrical Characteristics
The DC electrical characteristics are shown in the tables below.
Table 15: DC Electrical Characteristics
Symbol Definition
Condition
VDD
Core digital voltage
VDD_IO I/O digital voltage
VAA
Analog voltage
VAA_PIX Pixel supply voltage
VDD_PLL PLL supply voltage
VDD_SLVS Digital supply voltage
Do not connect.
VIH
Input HIGH voltage
VIL
Input LOW voltage
IIN
Input leakage current
No pull-up resistor; VIN = VDD_IO or
DGND
VOH
Output HIGH voltage
VOL
Output LOW voltage
IOH
Output HIGH current
At specified VOH
IOL
Output LOW current
At specified VOL
Min
Typ
Max
Unit
1.7
1.8
1.95
V
1.7/2.5 1.8/2.8 1.9/3.1
V
2.5
2.8
3.1
V
2.5
2.8
3.1
V
2.5
2.8
3.1
V
–
–
–
V
VDD_IO*0.7 –
–
V
–
–
VDD_IO*0.3 V
20
–
–
A
VDD_IO-0.3 –
–
–
-22
–
–
–
–
V
0.4
V
–
mA
22
mA
AR0130 DS Rev. L Pub. 6/15 EN
45
©Semiconductor Components Industries, LLC, 2015.