AR0130 Datasheet, PDF (38/53 Pages) ON Semiconductor – CMOS Digital Image Sensor

Package Dimensions
Figure 28: 48 iLCC Package Outline Drawing
A
0.15 A B C
7.7
3.85
48X 0.4±0.05
0.15 A B C
10±0.075
7.7
0.7 TYP
3.85
4.45
5
8.9
0.2±0.1
1.250±0.125
1.35±0.05
0.15 A B C
4.15 ^4.45
10±0.075
0.7 TYP
0.725 TYP
3
6
0.525 TYP
0.125 TYP
NOTES
DIMENSIONS IN MM. DIMENSIONS IN () ARE FOR REFERENCE ONLY.
DO NOT MEASURE PRINTED DRAWING.
ENCAPSULANT: EPOXY
SUBSTRATE MATERIAL: PLASTIC LAMINATE 0.50 THICKNESS
LID MATERIAL: BOROSILICATE GLASS 0.4 THICKNESS
REFRACTIVE INDEX AT 20°C = 1.5255 @ 546nm & 1.5231 @ 588nm
DOUBLE SIDE AR COATING: 530-570nm R<1%; 420-700nm R<2%
LEAD FINISH: GOLD PLATING, 0.5 MICRONS MINIMUM THICKNESS
IMAGE SENSOR DIE
MAXIMUM ROTATION OF OPTICAL AREA RELATIVE TO PACKAGE EDGES: 1°
MAXIMUM TILT OF OPTICAL AREA RELATIVE TO SEATING PLANE A: 35 MICRONS
MAXIMUM TILT OF OPTICAL AREA RELATIVE TO TOP OF COVER GLASS: 50 MICRONS
OPTICAL CENTER = PACKAGE CENTER. DIE CENTER OFFSET FROM PACKAGE CENTER:
X = 0.018, Y = -0.277MM
5±0.075
2
First
Clear
Pixel
5±0.075
Optical
4
Area
7
Optical
Center
8
Die
Center
(4.87 CTR)
6.40 CTR CTR
7.28 = 0.10 CTR
(3.67 CTR)
6.227 CTR
5.2 CTR