SE98 Datasheet, PDF (28/39 Pages) NXP Semiconductors – DDR memory module temp sensor, 3.3 V

NXP Semiconductors
SE98
DDR memory module temp sensor, 3.3 V
300
I_DD(AV)
(µA)
200
V_DD = 3.0 V
3.3 V
3.6 V
100
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16
I_DD(stb)
(µA)
12
V_DD = 3.0 V
3.3 V
3.6 V
8
4
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0
−50 −25 0
25 50 75 100 125
T_amb (°C)
Fig 14. Supply current versus temperature
15.0
I_{OL(sink)EVENT}
(mA)
10.0
V_DD = 3.0 V
3.3 V
3.6 V
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5.0
0
−50 −25 0
25 50 75 100 125
T_amb (°C)
Fig 15. Standby supply current versus temperature
20.0
15.0
I_{OL(sink)(SDA)}
(mA)
10.0
V_DD = 3.0 V
3.3 V
3.6 V
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5.0
0
−50 −25 0
25 50 75 100 125
T_amb (°C)
Fig 16. EVENT sink current at 0.4 V versus
temperature
4
Temp
Error
(°C)
2
0
−50 −25 0
25 50 75 100 125
T_amb (°C)
Fig 17. EVENT sink current at 0.6 V versus
temperature
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0
−2
−4
−50 −25 0
Sample of 25 devices at V_DD = 3.3 V
Fig 18. Temperature Error versus temperature
25 50 75 100 125
T_amb (°C)
SE98_4
Product data sheet
Rev. 04 — 2 February 2009
© NXP B.V. 2009. All rights reserved.
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