SE98 Datasheet, PDF (27/39 Pages) NXP Semiconductors – DDR memory module temp sensor, 3.3 V

NXP Semiconductors
SE98
DDR memory module temp sensor, 3.3 V
11. Characteristics
Table 25. Characteristics
V_DD = 3.0 V to 3.6 V; T_amb = −40 °C to +125 °C; unless otherwise specified.
Symbol
Parameter
Conditions
T_lim(acc)
T_res
I_DD(AV)
I_DD(stb)
T_conv
E_f(conv)
temperature limit accuracy
temperature resolution
average supply current
standby supply current
conversion period
conversion rate error
C grade temperature accuracy;
V_DD = 3.3 V ± 10 %
T_amb = 75 °C to 95 °C
T_amb = 40 °C to 125 °C
T_amb = −40 °C to +125 °C
SMBus inactive
percentage error in programmed
data
I_L
leakage current
V_DD
supply voltage
on A0, A1, A2 pins
Min
Typ
Max
Unit
−2.0
< ±1
+2.0
°C
−3.0
< ±2
+3.0
°C
−4.0
< ±3
+4.0
°C
-
0.25
-
°C
-
-
250
µA
-
8
15
µA
-
100
-
ms
−30
-
+30
%
-
1
-
µA
3.0
3.3
3.6
V
Table 26. SMBus DC characteristics
V_DD = 3.0 V to 3.6 V; T_amb = −40 °C to +120 °C; unless otherwise specified. These specifications are guaranteed by design.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V_IH
HIGH-level input voltage
V_IL
LOW-level input voltage
I_{OL(sink)EVENT} LOW-level output sink current on pin
EVENT
SCL, SDA;
V_DD = 3.0 V to 3.6 V
SCL, SDA;
V_DD = 3.0 V to 3.6 V
V_OL = 0.4 V
2.2
-
-
-
1
-
-
V
0.8
V
-
mA
I_{OL(sink)(SDA)}
I_LOH
I_LIH
I_LIL
C_i
LOW-level output sink current on pin SDA V_OL = 0.6 V
HIGH-level output leakage current
V_OH = V_DD
HIGH-level input leakage current
V_I = V_DD or V_SS
LOW-level input leakage current
V_I = V_DD or V_SS
input capacitance
SCL, SDA pins
6
-
-
-
−1.0
-
−1.0
-
-
5
-
mA
1.0
µA
+1.0
µA
+1.0
µA
10
pF
SE98_4
Product data sheet
Rev. 04 — 2 February 2009
© NXP B.V. 2009. All rights reserved.
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