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COP8TAB9 Datasheet, PDF (10/59 Pages) National Semiconductor (TI) – 8-Bit CMOS Flash Microcontroller with 2k Byte or 4k Byte Memory
7.0 Absolute Maximum Ratings (Note
1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (VCC)
Voltage at Any Pin
ESD Protection Level
(Human Body Model)
(Machine Model)
3.5V
−0.3V to VCC +0.3V
2 kV
200V
Total Current into VCC Pin (Source)
Total Current out of GND Pin
(Sink)
Storage Temperature Range
80 mA
60 mA
−65˚C to +140˚C
Note 1: Absolute maximum ratings indicate limits beyond which damage to
the device may occur. DC and AC electrical specifications are not ensured
when operating the device at absolute maximum ratings.
8.0 Electrical Characteristics
DC Electrical Characteristics −40˚C ≤ TA ≤ +85˚C unless otherwise specified.
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Operating Voltage
2.25
2.75
Power Supply Rise Time from 0.0V
(On-Chip Power-On Reset Selected)
20 µs
10 ms
Power Supply Ripple (Note 3)
Supply Current (Note 4)
Peak-to-Peak
0.1 VCC
CKI = 15 MHz
VCC = 2.75V, tC = 0.65µs
6
CKI = 5MHz
VCC = 2.75V, tC = 2.0 µs
3
HALT Current (Note 5) — WATCHDOG Disabled VCC = 2.75V, CKI = 0
MHz
IDLE Current (Note 4)
TA=25˚C
TA=85˚C
2
15
100
CKI = 15 MHz
CKI = 5MHz
Input Levels (VIH, VIL)
Logic High
VCC = 2.75V, tC = 0.65µs
1
VCC = 2.75V, tC = 2.0 µs
0.8
L0 (SDA), L1 (SCL) and L2
1.8V compatibility option
1.4
selected and
ACCESS.Bus is enabled
All Other Inputs
Logic Low
Value of the Internal Bias Resistor
0.8 VCC
0.25 VCC
0.3
1.0
2.5
for the Crystal/Resonator Oscillator
Hi-Z Input Leakage (same as TRI-STATE output)
Input Pullup Current
Port Input Hysteresis
VCC = 2.75V
VCC = 2.75V, VIN = 0V
−0.1
−15
0.1
+0.1
−120
Output Current Levels
Source (Weak Pull-Up)
Source (Push-Pull Mode)
Sink (Push-Pull Mode)
Allowable Sink & Source Current per Pin
Maximum Input Current without Latchup
VCC = 2.25V, VOH = 1.7V
−10
VCC = 2.25V, VOH = 1.7V
−10
VCC = 2.25V, VOL = 0.4V
10
−80
16
±200
RAM Retention Voltage, Vr
TBD
Input Capacitance
8.5
Flash Endurance
20K
Flash Data Retention
25˚C
100
Units
V
V
mA
mA
µA
µA
mA
mA
V
V
V
MΩ
µA
µA
V
µA
mA
mA
mA
mA
V
pF
Erase/Write
Cycles
years
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