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MT40A512M16JY-075EAIT Datasheet, PDF (335/358 Pages) Micron Technology – 8Gb: x4, x8, x16 DDR4 SDRAM
Table 157: Electrical Characteristics and AC Timing Parameters (Continued)
Parameter
Data setup time to
Base (calibrated
DQS_t, DQS_c
VREF)
Noncalibrated
VREF
Data hold time from Base (calibrated
DQS_t, DQS_c
VREF)
Noncalibrated
VREF
DQ and DM minimum data pulse width
for each input
DQS_t, DQS_c to DQ skew, per group, per
access
DQ output hold time from DQS_t, DQS_c
Data Valid Window per device: tQH -
tDQSQ each device’s output per UI
Data Valid Window per device, per pin:
tQH - tDQSQ each device’s output per UI
DQ Low-Z time from CK_t, CK_c
DQ High-Z time from CK_t, CK_c
DQS_t, DQS_c rising edge to CK_t, CK_c
rising edge for 1tCK preamble
DQS_t, DQS_c rising edge to CK_t, CK_c
rising edge for 2tCK preamble
DQS_t, DQS_c differential input low pulse
width
DQS_t, DQS_c differential input high
pulse width
DQS_t, DQS_c falling edge setup to CK_t,
CK_c rising edge
Symbol
tDS
tPDA_S
DDR4-1600
DDR4-1866
DDR4-2133
DDR4-2400
Min Max Min Max Min Max Min Max
DQ Input Timing
Refer to DQ Input Receiver Specification section
(approximately 0.15tCK to 0.28tCK )
minimum of 0.5UI
tDH
tPDA_H
Refer to DQ Input Receiver Specification section
(approximately 0.15tCK to 0.28tCK )
minimum of 0.5UI
tDIPW
0.58
–
0.58
–
0.58
–
0.58
–
DQ Output Timing (DLL enabled)
tDQSQ
–
0.16
–
0.16
–
0.16
–
0.17
tQH
tDVWd
tDVWp
tLZDQ
tHZDQ
tDQSS1ck
tDQSS2ck
tDQSL
0.76
–
0.76
–
0.76
–
0.74
–
0.63
0.63
0.64
0.64
0.66
-
0.66
-
0.69
-
0.72
-
–450 225 –390 195 –360 180 –330 175
–
225
–
195
–
180
–
175
DQ Strobe Input Timing
–0.27 0.27 –0.27 0.27 –0.27 0.27 –0.27 0.27
–0.50 0.50 –0.50 0.50 –0.50 0.50 –0.50 0.50
0.46 0.54 0.46 0.54 0.46 0.54 0.46 0.54
tDQSH
0.46 0.54 0.46 0.54 0.46 0.54 0.46 0.54
tDSS
0.18
–
0.18
–
0.18
–
0.18
–
Unit
–
UI
–
UI
UI
UI
UI
UI
UI
ps
ps
CK
CK
CK
CK
CK
Notes