PIC16LF1847 Datasheet, PDF (357/408 Pages) Microchip Technology – 18/20/28-Pin Flash Microcontrollers with nanoWatt XLP Technology

PIC16(L)F1847
30.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C
Param
No.
Sym.
Characteristic
Min.
Typ† Max. Units
Conditions
Program Memory Programming
Specifications
D110 _{VIHH Voltage on MCLR/VPP/RA5 pin}
8.0
—
9.0
V (Note 3, Note 4)
D112
VDD for Bulk Erase
2.7
—
VDD
V
max.
D113 VPEW VDD for Write or Row Erase
VDD
min.
—
VDD
V
max.
D114 IPPPGM Current on MCLR/VPP during Erase/
—
Write
D115 IDDPGM Current on VDD during Erase/Write
—
—
1.0
mA
5.0
mA
D116
D117
ED
VDRW
Data EEPROM Memory
Byte Endurance
VDD for Read/Write
100K
VDD
min.
—
—
E/W -40C to +85C
—
VDD
V
max.
D118
D119
TDEW Erase/Write Cycle Time
TRETD Characteristic Retention
—
4.0
5.0
ms
20
—
—
Year Provided no other
specifications are violated
D120 TREF Number of Total Erase/Write Cycles
1M
before Refresh⁽²⁾
10M
—
E/W -40°C to +85°C
D121 EP
D122 VPR
Program Flash Memory
Cell Endurance
VDD for Read
10K
—
—
E/W -40C to +85C (Note 1)
VDD
min.
—
VDD
V
max.
D123
D124
TIW
Self-timed Write Cycle Time
TRETD Characteristic Retention
—
2
2.5
ms
40
—
—
Year Provided no other
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: Self-write and Block Erase.
2: Refer to Section 11.2 “Using the Data EEPROM” for a more detailed discussion on data EEPROM endurance.
3: Required only if single-supply programming is disabled.
4: The MPLAB ICD 2 does not support variable VPP output. Circuitry to limit the MPLAB ICD 2 VPP voltage must be placed
between the MPLAB ICD 2 and target system when programming or debugging with the MPLAB ICD 2.
 2011 Microchip Technology Inc.
Preliminary
DS41453A-page 359