PIC16LF1508 Datasheet, PDF (339/384 Pages) Microchip Technology – 20-Pin Flash, 8-Bit Microcontrollers with nanoWatt XLP Technology

PIC16(L)F1508/9
29.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C
Param
No.
Sym.
Characteristic
Program Memory
Programming Specifications
D110 VIHH Voltage on MCLR/VPP pin
D111 IDDP Supply Current during
Programming
D112 VBE VDD for Bulk Erase
D113 VPEW VDD for Write or Row Erase
Min. Typ† Max. Units
Conditions
8.0
—
9.0
V (Note 2)
—
—
10
mA
2.7
— VDD max. V
VDD min.
—
VDD max. V
D114 IPPPGM Current on MCLR/VPP during Erase/
—
1.0
—
mA
Write
D115 IDDPGM Current on VDD during Erase/Write
—
5.0
—
mA
Program Flash Memory
D121 EP Cell Endurance
10K
—
—
E/W -40C to +85C (Note 1)
D122 VPR VDD for Read
VDD min.
—
VDD max. V
D123 TIW Self-timed Write Cycle Time
—
2
2.5
ms
D124 TRETD Characteristic Retention
—
40
—
Year Provided no other
specifications are violated
D125 EHEFC High-Endurance Flash Cell
100K
—
—
E/W 0°C to +60°C lower byte,
last 128 addresses
†
Note 1:
2:
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Self-write and Block Erase.
Required only if single-supply programming is disabled.
 2011 Microchip Technology Inc.
Preliminary
DS41609A-page 339