PIC18F2X1X Datasheet, PDF (330/380 Pages) Microchip Technology – 28/40/44-PIN FLASH MICROCONTROLLERS WITH 10-BIT A/D AND NANO WATT TECHNOLOGY

PIC18F2X1X/4X1X
TABLE 25-1: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Internal Program Memory
Programming Specifications⁽¹⁾
D110 VPP Voltage on MCLR/VPP/RE3 pin VDD + 4 —
12.5 V (Note 2)
D113 IDDP Supply Current during
Programming
—
10
— mA
Program Flash Memory
D130 EP Cell Endurance
10K 100K
— E/W -40°C to +85°C
D131 VPR VDD for Read
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D132 VIE VDD for Block Erase
4.5
—
5.5
V Using ICSP™ port
D132A VIW VDD for Externally Timed Erase 4.5
—
5.5
V Using ICSP port
or Write
D133 TIE ICSP Block Erase Cycle Time
—
4
—
ms VDD > 4.5V
D133A TIW ICSP Erase or Write Cycle Time 1
(externally timed)
—
—
ms VDD > 4.5V
D134 TRETD Characteristic Retention
40
100
— Year Provided no other
specifications are violated
†
Note 1:
2:
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Required only if Single-Supply programming is disabled.
DS39636A-page 328
Preliminary
 2004 Microchip Technology Inc.