PIC18F2X1X Datasheet, PDF (325/380 Pages) Microchip Technology – 28/40/44-PIN FLASH MICROCONTROLLERS WITH 10-BIT A/D AND NANO WATT TECHNOLOGY

PIC18F2X1X/4X1X
25.2 DC Characteristics: Power-Down and Supply Current
PIC18F2X1X/4X1X (Industrial)
PIC18LF2X1X/4X1X (Industrial) (Continued)
PIC18LF2X1X/4X1X
(Industrial)
PIC18F2X1X/4X1X
(Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C ≤ TA ≤ +85°C for industrial
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
ParamNo.
Device
Typ Max Units
Conditions
Supply Current (IDD)^(2,3)
PIC18LF2X1X/4X1X 65 130 µA
65 120 µA
70 115 µA
PIC18LF2X1X/4X1X 120 270 µA
120 250 µA
130 240 µA
All devices 300 480 µA
240 450 µA
300 430 µA
Extended devices only 320 900 µA
PIC18LF2X1X/4X1X 260 475 µA
255 450 µA
270 430 µA
PIC18LF2X1X/4X1X 420 900 µA
430 850 µA
450 810 µA
All devices 0.9 1.5 mA
-40°C
+25°C
+85°C
-40°C
+25°C
+85°C
-40°C
+25°C
+85°C
+125°C
-40°C
+25°C
+85°C
-40°C
+25°C
+85°C
-40°C
VDD = 2.0V
VDD = 3.0V
VDD = 5.0V
VDD = 2.0V
VDD = 3.0V
FOSC = 1 MHz
(PRI_IDLE mode,
EC oscillator)
FOSC = 4 MHz
(PRI_IDLE mode,
EC oscillator)
Legend:
Note 1:
2:
3:
4:
5:
0.9 1.4 mA
0.9 1.3 mA
+25°C
+85°C
VDD = 5.0V
Extended devices only 1 1.2 mA
+125°C
Extended devices only 2.8 7.0 mA
4.3 11 mA
+125°C
+125°C
VDD = 4.2V
VDD = 5.0V
FOSC = 25 MHz
(PRI_IDLE mode,
EC oscillator)
All devices 6.0 16 mA
-40°C
6.2 16 mA
6.6 16 mA
All devices 8.1 18 mA
9.1 18 mA
+25°C
+85°C
-40°C
+25°C
VDD = 4.2V
VDD = 5.0V
FOSC = 40 MHz
(PRI_IDLE mode,
EC oscillator)
8.3 18 mA
+85°C
Shading of rows is to assist in readability of the table.
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured
with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD or VSS and all features that
add delta current disabled (such as WDT, Timer1 Oscillator, BOR, etc.).
The supply current is mainly a function of operating voltage, frequency and mode. Other factors, such as I/O pin
loading and switching rate, oscillator type and circuit, internal code execution pattern and temperature, also have
an impact on the current consumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD;
MCLR = VDD; WDT enabled/disabled as specified.
For RC oscillator configurations, current through REXT is not included. The current through the resistor can be
estimated by the formula Ir = VDD/2REXT (mA) with REXT in kΩ.
Low-power Timer1 oscillator selected.
BOR and HLVD enable internal band gap reference. With both modules enabled, current consumption will be less
than the sum of both specifications.
 2004 Microchip Technology Inc.
Preliminary
DS39636A-page 323