PIC24HJ256GP210A-I Datasheet, PDF (288/326 Pages) Microchip Technology – 16-bit Microcontrollers with Advanced Analog

PIC24HJXXXGPX06A/X08A/X10A
25.1 High Temperature DC Characteristics
TABLE 25-1: OPERATING MIPS VS. VOLTAGE
Characteristic
VDD Range
(in Volts)
Temperature Range
(in °C)
Max MIPS
PIC24HJXXXGPX06A/X08A/X10A
HDC5
VBOR to 3.6V⁽¹⁾
-40°C to +150°C
20
Note 1: Device is functional at VBORMIN < VDD < VDDMIN. Analog modules such as the ADC will have degraded
performance. Device functionality is tested but not characterized. Refer to parameter BO10 in Table 24-11
for the minimum and maximum BOR values.
TABLE 25-2: THERMAL OPERATING CONDITIONS
Rating
High Temperature Devices
Operating Junction Temperature Range
Operating Ambient Temperature Range
Power Dissipation:
Internal chip power dissipation:
PINT = VDD x (IDD -  IOH)
I/O Pin Power Dissipation:
I/O =  ({VDD - VOH} x IOH) +  (VOL x IOL)
Maximum Allowed Power Dissipation
Symbol Min
TJ
-40
TA
-40
Typ
Max
Unit
—
+155
°C
—
+150
°C
PD
PINT + PI/O
W
PDMAX
(TJ - TA)/JA
W
TABLE 25-3: DC TEMPERATURE AND VOLTAGE SPECIFICATIONS
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  TA  +150°C for High Temperature
Parameter
No.
Symbol
Characteristic
Min
Typ
Max Units
Conditions
Operating Voltage
HDC10 Supply Voltage
VDD
—
3.0
3.3
3.6
V -40°C to +150°C
TABLE 25-4: DC CHARACTERISTICS: POWER-DOWN CURRENT (IPD)
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  TA  +150°C for High Temperature
Parameter
No.
Typical
Max
Units
Conditions
Power-Down Current (IPD)
HDC60e
250
2000
A
+150°C
3.3V Base Power-Down Current^(1,3)
Note 1: Base IPD is measured with all peripherals and clocks shut down. All I/Os are configured as inputs and
pulled to VSS. WDT, etc., are all switched off, and VREGS (RCON<8>) = 1.
2: The  current is the additional current consumed when the module is enabled. This current should be
added to the base IPD current.
3: These currents are measured on the device containing the most memory in this family.
4: These parameters are characterized, but are not tested in manufacturing.
DS70592D-page 288
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