IS66WVD1M16ALL Datasheet, PDF (28/52 Pages) Integrated Silicon Solution, Inc – Single device supports asynchronous and burst operation

IS66WVD1M16ALL
Electrical Characteristics
Table 11. Absolute Maximum Ratings
Parameter
Voltage to Any Ball Except VDD, VDDQ Relative to VSS
Voltage on VDD Supply Relative to VSS
Voltage on VDDQ Supply Relative to VSS
Storage Temperature (plastic)
Operating Temperature (case)
Soldering Temperature and Time : 10s (solder ball only)
Rating
-0.3V to VDDQ + 0.3V
-0.2V to + 2.45V
-0.2V to + 2.45V
-55°Cto + 150°C
-40°Cto + 85°C
+ 260°C
Notes:
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other
conditions above those indicated in this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Table 12. Electrical Characteristics and Operating Conditions
Industrial Temperature (–40ºC < TC < +85ºC)
Description
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Asynchronous Random
READ/WRITE
Initial Access, Burst
READ/WRITE
Continuous Burst READ
Continuous Burst WRITE
Standby Current
Conditions
IOH = -0.2mA
IOL = +0.2mA
VIN = 0 to VDDQ
OE#=VIH or
Chip Disabled
Conditions
VIN = VDDQ or 0V
Chip enabled,
IOUT = 0
VIN=VDDQ or 0V
CE#=VDDQ
Symbol
VDD
VDDQ
VIH
VIL
VOH
VOL
ILI
ILO
Symbol
IDD1
-70
IDD2
IDD3R
IDD3W
133Mhz
104Mhz
80Mhz
133Mhz
104Mhz
80Mhz
133Mhz
104Mhz
80Mhz
ISB
MIN
1.7
1.7
VDDQ-0.4
-0.20
0.80 VDDQ
TYP
MAX
1.95
1.95
VDDQ+0.2
0.4
0.20 VDDQ
1
1
MAX
25
45
35
30
40
30
25
40
35
30
80
Unit
V
V
V
V
V
V
uA
uA
Unit
mA
mA
mA
mA
uA
Note
1
2
3
3
Note
4
4
4
4
5
Rev. A | July 2013
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