IS61QDB42M36 Datasheet, PDF (12/28 Pages) Integrated Silicon Solution, Inc – 72 Mb (2M x 36 & 4M x 18) QUAD (Burst of 4) Synchronous SRAMs

72 Mb (2M x 36 & 4M x 18)
Q_QUAD (Burst of 4) Synchronous SRAMs
I³
Absolute Maximum Ratings
Item
Symbol
Rating
Units
Power supply voltage
V_DD
-0.5 to 2.9V
V
Output power supply voltage
V_DDQ
-0.5 to 2.9V
V
Input voltage
V_IN
-0.5 to VDD+0.3V
V
Data out voltage
V_DOUT
-0.5 to 2.6
V
Operating temperature
T_A
0 to 70
°C
Junction temperature
T_J
110
°C
Storage temperature
T_STG
-55 to +125
°C
Note: Stresses greater than those listed in this table can cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these or any other conditions above those indicated in the operational sections of this datasheet is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
12
Integrated Silicon Solution, Inc.
Rev. 
11/10/09