PTFC270051M Datasheet, PDF (9/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz

PTFC270051M
Typical Performance, 940 MHz (cont.)
CW Performance
at selected supply voltages
I_DQ = 65 mA, ƒ = 960 MHz
26
66
Gain
24
54
22
42
20
30
Efficiency
18
V_DD = 24 V
V_DD = 28 V
18
V_DD = 32 V
16
c270051m-900-gr9
6
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Small Signal CW Performance
V_DD = 28 V, I_DQ = 65 mA
26
-4
24
-8
22
-12
Gain
20
-16
18
-20
16
750
800
850
900
IRL
950
1000
c270051m-900-gr12
-24
1050 1100
Frequency (MHz)
Broadband Circuit Impedance
Freq
[MHz]
920
940
960
Z Source 
R
jX
3.3
10
3.4
10.2
3.5
10.3
Z Load 
R
jX
25.6
13.2
24.7
13.3
24.3
14.7
Z Source
D
Z Load
G
S
Loadpull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA
Class AB
Freq
Zs
[MHz]
[
920 3.35 + j10
940 3.4 + j10.2
960 3.55 + j10.3
Max Output Power
Zl
Gain PAE P_OUT
[
[dB] [%] [dBm]
25.7 + j4.7 25.5 62.2 39.40
24.8 + j6.3 25.6 62.1 39.35
24.4 + j6.6 25.3 60.3 39.10
P_1dB
P_OUT
[W]
8.7
8.6
8.1
Zl
[
25.6 + j21.7
24.6 + j20.4
24.1 + j22.8
Max PAE
Gain PAE
[dB] [%]
27.6 70.7
27.3 69.2
27.3 68.2
P_OUT
[dBm]
38.00
38.10
37.50
P_OUT
[W]
6.3
6.5
5.6
Data Sheet
9 of 14
Rev. 01.1, 2016-07-26