PTFC270051M Datasheet, PDF (8/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz

Reference Circuit, 940 MHz (cont.)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA, ƒ = 920 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
65
IMD Low
-15
IMD Up
55
ACPR
-25
Efficiency
45
-35
35
-45
25
-55
15
-65
c270051m-900-gr4
5
22 24 26 28 30 32 34 36 38
Output Power (dBm)
PTFC270051M
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA, ƒ = 940 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
65
IMD Low
-15
ACPR
55
IMD Up
-25
Efficiency
45
-35
35
-45
25
-55
15
-65
c270051m-900-gr5
5
22 24 26 28 30 32 34 36 38
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA, ƒ = 960 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
65
-15
IMD Low
55
IMD Up
-25
ACPR
45
Efficiency
-35
35
-45
25
-55
15
-65
c270051m-900-gr6
5
22 24 26 28 30 32 34 36 38
Output Power (dBm)
CW Performance
V_DD = 28 V, I_DQ = 65 mA
26
66
Gain
24
54
22
42
20
30
18 ^Efficiency
16
21
25
29
920 MHz
18
940 MHz
960 MHz
33
37
c270051m-900-gr8
6
41
Output Power (dBm)
Data Sheet
8 of 14
Rev. 01.1, 2016-07-26