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PTFC270051M Datasheet, PDF (13/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz | |||
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PTFC270051M
Package Outline Specifications
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Diagram Notesâunless otherwise speciï¬ed:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.10 [0.004].
4. Package dimensions: 4.0 mm X 4.0 mm X 1.42 mm.
5. Pins: 1 â 5, gate; 6 â 10, drain; S (bottom side metallization), source.
6. Gold plating thickness: 0.025 â 0.127 micron [1 â 5 microinch].
Find the latest and most complete information about products and packaging at the Inï¬neon Internet page
(http://www.inï¬neon.com/rfpower)
Data Sheet
13 of 14
Rev. 01.1, 2016-07-26
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