PTFC270051M Datasheet, PDF (5/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz

PTFC270051M
Typical Performance, 2170 MHz (cont.)
Small Signal CW Performance
V_DD = 28 V, I_DQ = 65 mA
22
0
21
-5
IRL
20
-10
19
-15
18
-20
Gain
17
-25
16
2000
2050
2100 2150 2200
Frequency (MHz)
c270051m-2100-gr12
-30
2250 2300
Broadband Circuit Impedance, 2170 MHz
Freq
[MHz]
2110
2140
2170
Z Source 
R
jX
1.5
–2.6
1.5
–2.7
1.5
–2.9
Z Load 
R
jX
9.5
5.4
8.7
5.5
7.7
5.6
Z Source
D
Z Load
G
S
Load Pull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA
Class AB
Max Output Power
P_1dB
Freq
Zs
[MHz]
[
Zl
Gain PAE P_OUT P_OUT
Zl
[
[dB] [%] [dBm] [W]
[
2110 1.5 – j2.6 10.6 + j2.6 20.6 55.0 39.50 8.9 8.3 + j8.2
2140 1.4 – j2.7 9.8 + j2.8 20.5 56.4 39.46 8.8 7.6 + j8.8
2170 1.4 – j2.9 9.2 + j2.8 20.7 56.2 39.20 8.3 6.2 + j8.3
Max PAE
Gain PAE
[dB] [%]
22.5 64.9
22.9 64.1
23.0 63.8
P_OUT
[dBm]
38.50
37.90
37.40
P_OUT
[W]
7.1
6.2
5.5
Data Sheet
5 of 14
Rev. 01.1, 2016-07-26