PTFC270051M Datasheet, PDF (2/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz

PTFC270051M
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
Maximum Ratings
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 60 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 65 mA
Symbol Min Typ
V(_BR)DSS
65
—
I_DSS
—
—
I_GSS
—
—
R_DS(on)
—
2
V_GS
2.2
2.7
Max
—
1
1
—
3.2
Unit
V
µA
µA

V
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE 70°C, 5.5 W CW)
Moisture Sensitivity Level
Symbol
V_DSS
V_GS
V_DD
T_J
T_STG
R_JC
Value
65
–6 to +10
0 to +32
225
–65 to +150
3.84
Unit
V
V
V
°C
°C
°C/W
Level
Test Standard
3
IPC/JEDEC J-STD-020
Ordering Information
Package Temperature Unit
260
°C
Type
PTFC270051M V2 R1K
Order Code
PTFC270051MV2R1KXUMA1
Package and Description
PG-SON-10, molded plastic, SMD
Shipping
Tape & Reel, 1000 pcs
Evaluation Boards
Order Code
LTN/PTFC270051M V2
Frequency
2110 – 2170 MHz
Description
Class AB with combined outputs, R04360, 0.508 mm thick
LTN/PTFC270051M E3
LTN/PTFC270051M E4
2620 – 2690 MHz
920 – 960 MHz
Class AB with combined outputs, R04360, 0.508 mm thick
Class AB with combined outputs, R04360, 0.508 mm thick
LTN/PTFC270051M E5
LTN/PTFC270051M E6
1930 – 1990 MHz
1805 – 1880 MHz
Class AB with combined outputs, R04360, 0.508 mm thick
Class AB with combined outputs, R04360, 0.508 mm thick
Find Gerber files for these reference fixtures on the Infineon Web site at www.infineon.com/rfpower
Data Sheet
2 of 14
Rev. 01.1, 2016-07-26