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| PTFC270051M Datasheet, PDF (6/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz | |||
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PTFC270051M
Reference Circuit, 2170 MHz
DUT
PTFC270051M
Test Fixture Part No.
LTN/PTFC270051M V2
PCB
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, ï¥r = 3.66
Find Gerber ï¬les for this test ï¬xture on the Inï¬neon Web site at (http://www.inï¬neon.com/rfpower)
VDD
R101 C103
C102
R102
RF_IN
C101
C203
C202
C201 C204
RF_OUT
PTFC270051M_06 2100 MHz RO4350, .020 (169)
c 27 0 0 51 M _c d_ 1 0 -1 6 -1 3
Production test circuit assembly diagram (not to scale)
Components Information
Component
Description
C101
C102
C103
C201
C202
C203
C204
R101, R102
Chip capacitor, 1 pF
Chip capacitor, 2.2 µF
Chip capacitor, 12 pF
Chip capacitor, 1.1 pF
Chip capacitor, 12 pF
Capacitor, 10 µF
Chip capacitor, 12 pF
Resistor, 10 ï
Supplier
ATC
TDK Corporation
ATC
ATC
ATC
Taiyo Yuden
ATC
Panasonic
P/N
ATC600S1R0BI250X
C4532X7R1H225M160KA
ATC600S120BT250X
ATC600S1R1BT250X
ATC600S120BT250X
UMK325C7106MM-T
ATC600S120BT250X
ERJ-8GEYJ100V
Data Sheet
6 of 14
Rev. 01.1, 2016-07-26
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