PTFC270051M Datasheet, PDF (12/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz

PTFC270051M
Typical Performance, 2655 MHz (cont.)
CW Performance
at selected supply voltages
I_DQ = 65 mA, ƒ = 2690 MHz
22
70
Gain
21
60
20
50
V_DD = 24 V
19 ^{VDD = 28 V}
40
V_DD = 32 V
18
30
Efficiency
17
20
16
10
15
c270051m-2600-gr11
0
22
26
30
34
38
42
Output Power (dBm)
Small Signal CW Performance
V_DD = 28 V, I_DQ = 65 mA
23
22
21
20
19
18
17
2590
Gain
IRL
2640
2690
Frequency (MHz)
0
-5
-10
-15
-20
-25
c270051m-2600-gr12
-30
2740
Broadband Circuit Impedance
Freq
[MHz]
2490
2590
2690
Z Source 
R
jX
1.5
–4.1
1.5
–4.6
1.5
–5.5
Z Load 
R
jX
7.2
1.5
6.6
0.7
6.3
-0.6
Z Source
D
Z Load
G
S
Load Pull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA
Class AB
Max Output Power
P_1dB
Freq
Zs
[MHz]
[
Zl
Gain PAE P_OUT P_OUT
Zl
[
[dB] [%] [dBm] [W]
[
2490 1.5 – j4.1 8.2 + j0.3 19.7 55.6 39.0 7.94 6.2 + j2.8
2590 1.5 – j4.6 6.9 – j0.8 18.8 55.6 39.0 7.94 5.0 + j2.1
2690 1.5 – j5.5 7.8 – j2.0 18.4 55.6 39.0 7.94 4.9 + j0.8
Max PAE
Gain PAE
[dB] [%]
20.9 62.2
21.0 63.4
20.4 63.6
P_OUT
[dBm]
38.4
37.9
37.8
P_OUT
[W]
6.9
6.2
6.0
Data Sheet
12 of 14
Rev. 01.1, 2016-07-26