PTFC270051M Datasheet, PDF (3/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz

PTFC270051M
RF Characteristics, 2170 MHz
Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 65 mA, P_OUT = 0.8 W avg, ƒ₁ = 2157.5 MHz, ƒ₂ = 2167.5 MHz
3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
—
21
—
dB
_D
—
21.5
—
%
IMD
—
–35.5
—
dBc
Typical Performance, 2170 MHz (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA, ƒ = 2110 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
65
IMD Low
-15
IMD Up
55
ACPR
-25
Efficiency
45
-35
35
-45
25
-55
15
-65
c270051m-2100-gr4
5
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA, ƒ = 2140 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
65
IMD Low
-15
IMD Up
55
ACPR
-25
Efficiency
45
-35
35
-45
25
-55
15
-65
c270051m-2100-gr5
5
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Data Sheet
3 of 14
Rev. 01.1, 2016-07-26