PTFC270051M Datasheet, PDF (7/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz

PTFC270051M
RF Characteristics, 940 MHz
Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 65 mA, P_OUT = 0.8 W avg, ƒ₁ = 935 MHz, ƒ₂ = 945 MHz
3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
—
24
—
dB
_D
—
20.7
—
%
IMD
—
–42
—
dBc
Typical Performance, 940 MHz
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
25
60
Gain
24
45
23
30
Efficiency
22
920 MHz
15
940 MHz
960 MHz
21
c270051m-900-gr1.3
0
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
-25
-35
-45
920 IMDL
920 IMDU
940 IMDL
940 IMDU
-55
960 IMDL
960 IMDU
c270051m-900-gr7
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Data Sheet
7 of 14
Rev. 01.1, 2016-07-26