PTFC270051M Datasheet, PDF (4/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz

Typical Performance, 2170 MHz (cont.)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA, ƒ = 2170 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
65
IMD Low
-15
IMD Up
55
ACPR
-25
Efficiency
45
-35
35
-45
25
-55
15
-65
c270051m-2100-gr6
5
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
CW Performance
V_DD = 28 V, I_DQ = 65 mA
24
66
22
Gain
54
20
42
18
30
Efficiency
16
2110 MHz
18
2140 MHz
2170 MHz
14
c270051m-2100-gr8
6
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
PTFC270051M
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
-25
-35
-45
2110 IMD Low
2110 IMD Up
2140 IMD Low
2140 IMD Up
2170 IMD Low
2170 IMD Up
-55
c270051m-2100-gr7
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
CW Performance
at selected supply voltage
I_DQ = 65 mA, ƒ = 2170 MHz
22
70
21
60
20 ^Gain
50
19
40
18
30
17
16
Efficiency
15
V_DD = 24 V
V_DD = 28 V
V_DD = 32 V
20
10
c270051m-2100-gr11
0
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Data Sheet
4 of 14
Rev. 01.1, 2016-07-26