PTFC270051M Datasheet, PDF (10/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz

PTFC270051M
RF Characteristics, 2655 MHz
Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 65 mA, P_OUT = 0.8 W avg, ƒ₁ = 2650 MHz, ƒ₂ = 2660 MHz
3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
—
20.9
—
dB
_D
—
19
—
%
IMD
—
–40
—
dBc
Typical Performance, 2655 MHz
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
22
60
Gain
21
50
20
40
19
30
18 ^Efficiency
20
2620 MHz
17
2655 MHz
10
2690 MHz
16
c270051m-2600-gr1.3
0
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
-25
2620 IMD Low
2620 IMD Up
-35
2655 IMD Low
2655 IMD Up
2690 IMD Low
2690 IMD Up
-45
c270051m-2600-gr7
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Data Sheet
10 of 14
Rev. 01.1, 2016-07-26