PTFC270051M Datasheet, PDF (11/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz

PTFC270051M
Typical Performance, 2655 MHz (cont.)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA, ƒ = 2620 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
65
IMD Low
-15
IMD Up
55
ACPR
-25
Efficiency
45
-35
35
-45
25
-55
15
-65
c270051m-2600-gr4
5
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA, ƒ = 2655 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
65
IMD Low
-15
IMD Up
55
ACPR
-25
Efficiency
45
-35
35
-45
25
-55
15
-65
c270051m-2600-gr5
5
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA, ƒ = 2690 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
65
IMD Low
-15
IMD Up
55
ACPR
-25
Efficiency
45
-35
35
-45
25
-55
15
-65
c270051m-2600-gr6
5
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
CW Performance
V_DD = 28 V, I_DQ = 65 mA
22
70
21 ^Gain
60
20
50
19
40
18
30
17 _Efficiency
16
2620 MHz
20
2655 MHz
2690 MHz
10
15
c270051m-2600-gr8
0
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Data Sheet
11 of 14
Rev. 01.1, 2016-07-26