PTFC270051M Datasheet, PDF (1/14 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz

PTFC270051M
High Power RF LDMOS Field Effect Transistor
5 W, 28 V, 900 – 2700 MHz
Description
The PTFC270051M is an unmatched 5-watt LDMOS FET suitable
for power amplifier applications with frequencies from 900 MHz to
2700 MHz. This LDMOS transistor offers excellent gain, efficiency
and linearity performance in a small overmolded plastic package.
PTFC270051M
Package PG-SON-10
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
22
60
Gain
21
50
20
40
19
30
18 ^Efficiency
17
20
2110 MHz
2140 MHz
10
2170 MHz
16
c270051m-gr1.3
0
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Features
• Unmatched
• Typical CW performance, 940 MHz, 28 V
- Output power (P_1dB) = 6.5 W
- Gain = 23 dB
- Efficiency = 62%
• Typical CW performance, 2170 MHz, 28 V
- Output power (P_1dB) = 7.3 W
- Gain = 20.3 dB
- Efficiency = 60%
• Typical CW performance, 2655 MHz, 28 V
- Output power (P_1dB) = 7.3 W
- Gain = 19.9 dB
- Efficiency = 59.5%
• Capable of handling 10:1 VSWR @ 28 V, 5 W (CW)
output power
• Integrated ESD protection: Human Body Model
Class 1A (per JESD22-A114)
• Pb-free and RoHS compliant
RF Characteristics, 2170 MHz
CW Specifications (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 65 mA, P_OUT = 5 W, ƒ₁ = 2110 MHz, ƒ₂ = 2170 MHz
Characteristic
Symbol Min Typ
Gain
G_ps
18.5 19.5
Max
—
Unit
dB
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 01.1, 2016-07-26