HYB18L256160BF Datasheet, PDF (8/49 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Overview
Table 3
Type¹⁾
Ordering Information
Package
Description
Commercial Temperature Range
HYB18L256160BC-7.5 P-VFBGA-54-2
HYB18L256160BF-7.5 P-VFBGA-54-2
133 MHz 4 Banks × 4 Mbit × 16 LP-SDRAM
133 MHz 4 Banks × 4 Mbit × 16 LP-SDRAM
Extended Temperature Range
HYE18L256160BC-7.5 P-VFBGA-54-2
HYE18L256160BF-7.5 P-VFBGA-54-2
133 MHz 4 Banks × 4 Mbit × 16 LP-SDRAM
133 MHz 4 Banks × 4 Mbit × 16 LP-SDRAM
1) HYB / HYE: Designator for memory products (HYB: standard temp. range; HYE: extended temp. range)
18L: 1.8V Mobile-RAM
256: 256 MBit density
160: 16 bit interface width
B: die revision
C / F: lead-containing product (C) / green product (F)
-7.5: speed grade(s): min. clock cycle time
1.2
Pin Configuration
1
2
3
7
8
9
V
SS
DQ15
V
SSQ
A
V
DDQ
DQ0
V
DD
DQ14 DQ13
V
DDQ
B
V
SSQ
DQ2
DQ1
DQ12 DQ11
V
SSQ
C
V
DDQ
DQ4
DQ3
DQ10 DQ9 ^V_DDQ D ^V_SSQ DQ6 DQ5
DQ8 NC
V_SS E V_{DD LDQM DQ7}
UDQM CLK CKE F CAS RAS WE
A12 A11 A9 G BA0 BA1 CS
A8
A7
A6 H A0
A1 A10/AP
V
SS
A5
A4 J A3
A2
V
DD
Figure 1 Standard Ballout 256-Mbit Mobile-RAM
Data Sheet
8
V1.4, 2004-04-30