HYB18L256160BF Datasheet, PDF (43/49 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Electrical Characteristics
3
Electrical Characteristics
3.1
Operating Conditions
Table 17 Absolute Maximum Ratings
Parameter
Symbol
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Operation Case Temperature
Commercial
Extended
Storage Temperature
Power Dissipation
Short Circuit Output Current
V_DD
V_DDQ
V_IN
V_OUT
T_C
T_C
T_STG
P_D
I_OUT
Values
min.
max.
-0.3
2.7
-0.3
2.7
-0.3
V_DDQ + 0.3
-0.3
V_DDQ + 0.3
0
+70
-25
+85
-55
+150
–
0.7
–
50
Unit
V
V
V
V
°C
°C
°C
W
mA
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Table 18 Pin Capacitances¹⁾²⁾
Parameter
Symbol
Values
Unit
min.
max.
Input capacitance: CLK
Input capacitance: all other input pins
Input/Output capacitance: DQ
C_I1
1.5
3.0
pF
C_I2
1.5
3.0
pF
C_IO
3.0
5.0
pF
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 with VDD, VDDQ applied and all other pins (except the pin under test)
floating. DQ’s should be in high impedance state. This may be achieved by pulling CKE to low level.
Data Sheet
43
V1.4, 2004-04-30