HYB18L256160BF Datasheet, PDF (23/49 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Functional Description
CLK
Command ACT
Address
Ba A,
Row x
t_RCD
NOP
NOP
t_RAS
t_RC
READ NOP
NOP
Ba A,
Col n
A10 (AP) Row x
DQ
Dis AP
CL=3
t_RP
NOP
PRE
NOP
Pre All
AP
Pre Bank A
NOP
ACT
Ba A,
Row b
Row b
DO n DO n+1 DO n+2 DO n+3
Ba A, Col n = bank A, column n
AP = Auto Precharge
DO n = Data Out from column n
Dis AP = Disable Auto Precharge
Burst Length = 4 in the case shown.
3 subsequent elements of Data Out are provided in the programmed order following DO n.
= Don't Care
Figure 14 Single READ Burst (CAS Latency = 3)
Data from any READ burst may be concatenated with data from a subsequent READ command. In either case, a
continuous flow of data can be maintained. A READ command can be initiated on any clock cycle following a
previous READ command, and may be performed to the same or a different (active) bank. The first data element
from the new burst follows either the last element of a completed burst (Figure 15) or the last desired data element
of a longer burst which is being truncated (Figure 16). The new READ command should be issued x cycles after
the first READ command, where x equals the number of desired data elements.
CLK
Command READ
Address
Ba A,
Col n
DQ
DQ
NOP
NOP
NOP
READ
NOP
NOP
NOP
NOP
CL=2
Ba A,
Col b
DO n
DO n+1 DO n+2 DO n+3
DO b
DO b+1 DO b+2
CL=3
DO n
DO n+1 DO n+2 DO n+3
DO b
DO b+1
Ba A, Col n (b) = Bank A, Column n (b)
DO n (b) = Data Out from column n (b)
Burst Length = 4 in the case shown.
3 subsequent elements of Data Out are provided in the programmed order following DO n (b).
Figure 15 Consecutive READ Bursts
= Don't Care
Data Sheet
23
V1.4, 2004-04-30