HYB18L256160BF Datasheet, PDF (36/49 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Functional Description
CLK
Command WR-AP
Address
Bank n
Col b
DQ
DO b
NOP
READ
NOP
NOP
Bank m
Col x
DO b+1
t_WR (bank n)
CL=2
DO x
NOP
NOP
NOP
t_RP (bank n)
DO x+1 DO x+2 DO x+3
WR-AP = Write with Auto Precharge; READ = Read with or without Auto Precharge
CL = 2 and Burst Length = 4 in the case shown
Write with Auto Precharge to bank n is interrupted by subsequent Read to bank m
= Don't Care
Figure 39 WRITE with Auto Precharge Interrupted by READ
CLK
Command WR-AP
Address
Bank n
Col b
DQ
DI b
NOP
WRITE
NOP
NOP
NOP
NOP
Bank m
Col x
DI b+1
t_WR (bank n)
DI x
DI x+1
DI x+1
t_RP (bank n)
DI x+1
WR-AP = Write with Auto Precharge; WRITE = Write with or without Auto Precharge
Burst Length = 4 in the case shown
Write with Auto Precharge to bank n is interrupted by subsequent Write to bank m
Figure 40 WRITE with Auto Precharge Interrupted by WRITE
NOP
= Don't Care
Data Sheet
36
V1.4, 2004-04-30