HYB18L256160BF Datasheet, PDF (18/49 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Functional Description
Table 7 Inputs Timing Parameters
Parameter
Symbol
Clock cycle time
CL = 3
t_CK
CL = 2
Clock frequency
CL = 3
f_CK
CL = 2
Clock high-level width
t_CH
Clock low-level width
t_CL
Address and command input setup time
t_IS
Address and command input hold time
t_IH
min.
7.5
9.5
–
–
2.5
2.5
1.5
0.8
- 7.5
max.
–
–
133
105
–
–
–
–
Unit Notes
ns
–
ns
MHz
–
MHz
ns
–
ns
–
ns
–
ns
–
2.4.1 NO OPERATION (NOP)
CLK
CKE
CS
RAS
CAS
WE
A0-A12
BA0,BA1
(High)
The NO OPERATION (NOP) command is used to
perform a NOP to a Mobile-RAM which is selected (CS
= LOW). This prevents unwanted commands from
being registered during idle states. Operations already
in progress are not affected.
= Don't Care
Figure 6 No Operation Command
2.4.2 DESELECT
The DESELECT function (CS = HIGH) prevents new commands from being executed by the Mobile-RAM. The
Mobile-RAM is effectively deselected. Operations already in progress are not affected.
Data Sheet
18
V1.4, 2004-04-30