HYB18L256160BF Datasheet, PDF (4/49 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HYB18L256160BF-7.5, HYE18L256160BF-7.5, HYB18L256160BC-7.5, HYE18L256160BC-7.5
Revision History:
V1.4
2004-04-30
45
Table 20: t_T removed
47
Table 23: driver characteristics for half drive and full drive merged
Previous Version:
V1.3 (Preliminary Datasheet)
2003-03-19
12
power-up sequence: 2 instead of 8 ARF commands required
47
Table 22: IDD6 specification modified: typ. and max. values given
Previous Version:
V1.2 (Preliminary Datasheet)
2004-01-28
all
Package option with lead-containing (“black”) balls added
Previous Version:
V1.1 (Preliminary Datasheet)
2003-12-18
all
-8 speed grade removed
39
deep power-down exit: clarification added
45
Table 20: t_OH changed
46
Table 21: IDD parameter values changed
48
package drawing updated
Previous Version:
V1.0 (Preliminary Datasheet)
2003-06-23
all
converted to new datasheet template
all
sales code changed from “AF” to “BF”
17, 42
Table 6 and Table 16: Deep Power Down mode added
43
Table 17 (Absolute Maximum Ratings): max. V_DD and V_DDQ values changed to 2.7V
46
Table 21: parameters I_DD2PS, I_DD2NS, I_DD3PS and I_DD3NS added
Previous Version:
V0.5 (Target Datasheet)
2003-02
all
sales code changed from “AC” to “AF” (green package)
7
Table 2 (Memory Addressing Scheme) added
19
Figure 7 (Mode Register Set Command) corrected
35
Description of Concurrent Auto Precharge feature modified; Figure 37 to Figure 40 added
48
Package height reduced to 1.0 mm
Previous Version:
V0.4 (Target Datasheet)
2002-11
47
Table 23: drive strength values changed
Previous Version:
V0.3 (Target Datasheet)
2002-11
15
TCSR: temperature sensor activated permanently, making TCSR bits “don’t care”
46
Table 21: IDD parameter test conditions clarified
Previous Version:
V0.2 (Target Datasheet)
2002-11
all
complete new test layout, figures and tables
14
EMRS: bits A5, A6 used for Drive Strength definition
Previous Version:
V0.1 (Target Datasheet, initial release)
2002-09-06
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