HYB18L256160BF Datasheet, PDF (44/49 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L256160B[C/F]-7.5
256-Mbit Mobile-RAM
Electrical Characteristics
Table 19 Electrical Characteristics¹⁾
Parameter
Symbol
Values
Unit Notes
min.
max.
Power Supply Voltage
Power Supply Voltage for DQ Output Buffer
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
V_DD
1.65
1.95
V
–
V_DDQ
1.65
1.95
V
–
V_IH
0.8 × V_DDQ
V_DDQ + 0.3
V
2)
V_IL
-0.3
0.3
V
2)
V_OH
V_DDQ - 0.2
–
V
–
V_OL
–
0.2
V
–
I_IL
-1.0
1.0
µA
–
I_OL
-1.5
1.5
µA
–
1) 0 °C ≤ T_C ≤ 70 °C (comm.); -25 °C ≤ T_C ≤ 85 °C (ext.); all voltages referenced to V_SS. V_SS and V_SSQ must be at same potential.
2) V_IH may overshoot to V_DD + 0.8 V for pulse width < 4 ns; V_IL may undershoot to -0.8 V for pulse width < 4 ns.
Pulse width measured at 50% with amplitude measured between peak voltage and DC reference level.
Data Sheet
44
V1.4, 2004-04-30