BFP650_10 Datasheet, PDF (8/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

2
Maximum Ratings
BFP650
Maximum Ratings
Table 1 Maximum Ratings at T_A = 25°C (unless otherwise specified)
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Max.
Collector emitter voltage
V_CEO
Open base
–
4.0
V
T_A = 25 °C
–
3.7
V
T_A = -55 °C
Collector emitter voltage
V_CES
–
13
V
Emitter / base shortened
Collector base voltage
V_CBO
–
13
V
Open emitter
Emitter base voltage
V_EBO
–
1.2
V
Open collector
Collector current
I_C
–
150
mA –
Base current
Total power dissipation¹⁾
I_B
–
P_tot
–
10
mA –
500
mW T_S ≤ 80 °C
Junction temperature
T_J
–
150
°C –
Storage temperature
T_Stg
-65
150
°C –
1) T_S is the soldering point temperature. T_S measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
8
Revision 1.0, 2010-10-22