BFP650_10 Datasheet, PDF (17/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP650
Electrical Characteristics
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
0.8
1
1.2
1.4
1.6
1.8
2
V_EB [V]
Figure 7 Base Current vs. Base Emitter Reverse Voltage I_B = f (V_EB), V_CE = 2 V
Data Sheet
17
Revision 1.0, 2010-10-22