BFP650_10 Datasheet, PDF (19/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP650
Electrical Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_CB [V]
Figure 10 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz
42
39
36
33 _G
ms
30
27
24
21
G_ma
18
15
12
9
|S₂₁|²
6
3
0
0 1 2 3 4 5 6 7 8 9 10
f [GHz]
Figure 11 Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 3 V, I_C = 70 mA
Data Sheet
19
Revision 1.0, 2010-10-22