BFP650_10 Datasheet, PDF (24/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP650
Electrical Characteristics
Figure 20
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
Z
S
=
50Ω
0.8
Z =Z
S Sopt
0.6
0.4
0
20
40
60
80
100
I_c [mA]
Comparison Noise Figure NF₅₀ / NF_min= f (I_C), V_CE = 3 V, f = 2.4 GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. T_A = 25°C.
Data Sheet
24
Revision 1.0, 2010-10-22