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BFP650_10 Datasheet, PDF (15/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor
4.4
Characteristic DC Diagrams
BFP650
Electrical Characteristics
160
Figure 3
140
940µA
120
810µA
690µA
100
575µA
80
460µA
350µA
60
260µA
40
160µA
20
80µA
18µA
0
0
1
2
3
4
5
VCE [V]
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
120
110
100
90
80
70
60
50
0.1
1
10
100
IC [mA]
Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V
1000
Data Sheet
15
Revision 1.0, 2010-10-22