BFP650_10 Datasheet, PDF (16/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP650
Electrical Characteristics
1000
100
10
1
0.1
0.01
0.6
0.65
0.7
0.75
0.8
0.85
0.9
V_BE [V]
Figure 5 Collector Current vs. Base Emitter Voltage I_C = f (V_BE), V_CE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.6
0.65
0.7
0.75
0.8
0.85
0.9
V_BE [V]
Figure 6 Base Current vs. Base Emitter Forward Voltage I_B = f (V_BE), V_CE = 2 V
Data Sheet
16
Revision 1.0, 2010-10-22