BFP650_10 Datasheet, PDF (7/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

High Linearity Low Noise SiGe:C NPN RF Transistor
BFP650
1
Features
• Highly linear low noise driver amplifier for all RF frontends
up to 4.5 GHz
• Output compression point OP_1dB = 17 dBm
at 70 mA, 3V, 2.4 GHz, 50Ω system
• Output 3rd order intermodulation point OIP₃ = 30 dBm
at 70 mA, 3 V, 2.4 GHz, 50 Ω system
3
4
2
1
• Maximum available gain G_ma = 17.5 dB at 70 mA, 3V, 2.4 GHz
• Minimum noise figure NF_min = 1 dB at 30 mA, 3V, 2.4 GHz
• Based on Infineon´s reliable, high volume SiGe:C wafer technology
• Easy to use Pb-free (RoHS compliant) standard package with visible
leads
• Qualified according AEC Q101
Application Examples
Driver amplifier
• ISM bands 434 and 868 MHz
• 1.9 GHz cordless phones
• CATV LNA
Transmitter driver amplifier
• 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
Output stage LNA for active antennas
• TV, GPS, SDARS
• 2.4 / 5 GHz WLAN
• 2.4 / 3.5 / 5 GHz WiMAX, etc
Suitable for 5 - 10.5 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name Package
BFP650
SOT343
Data Sheet
1=B
Pin Configuration
2=E
3=C
7
4=E
Marking
R5s
Revision 1.0, 2010-10-22