BFP650_10 Datasheet, PDF (13/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP650
Electrical Characteristics
Table 8 AC Characteristics, V_CE = 3 V, f =1.5 GHz (cont’d)
Parameter
Symbol
Values
Min. Typ. Max.
Associated gain
Linearity
G_ass
–
20.5 –
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
17
–
31
–
Unit Note / Test Condition
dBm
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 70 mA
I_C = 70 mA
Table 9 AC Characteristics, V_CE = 3 V, f =1.9 GHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ma
–
G_ms
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
15
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
20.5 –
20
–
17
–
17.5 –
0.95 –
17.5 –
17
–
30.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 30 mA
I_C = 70 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 70 mA
Z_S = Z_opt
I_C = 30 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 70 mA
I_C = 70 mA
Table 10 AC Characteristics, V_CE = 3 V, f =2.4 GHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ma
–
G_ma
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
18
–
17.5 –
14.5 –
15
–
1
–
15
–
17
–
30
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 30 mA
I_C = 70 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 70 mA
Z_S = Z_opt
I_C = 30 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 70 mA
I_C = 70 mA
Data Sheet
13
Revision 1.0, 2010-10-22