BFP650_10 Datasheet, PDF (10/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

4
Electrical Characteristics
BFP650
Electrical Characteristics
4.1
DC Characteristics
Table 3 DC Characteristics at T_A = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V_(BR)CEO
Min.
4
Collector emitter leakage current
I_CES
–
–
Collector base leakage current
Emitter base leakage current
DC current gain
I_CBO
–
I_EBO
–
h_FE
100
Values
Typ. Max.
4.5
–
–
100
1
40
1
40
0.01 3
170 250
Unit Note / Test Condition
V
I_C = 3 mA, I_B = 0
Open base
µA V_CE = 13 V, V_BE = 0
nA V_CE = 5 V, V_BE = 0
Emitter/base shortened
nA V_CB = 5 V, I_E = 0
Open emitter
µA V_EB = 0.5 V, I_C = 0
Open collector
V_CE = 3 V, I_C = 70 mA
Pulse measured
4.2
General AC Characteristics
Table 4 General AC Characteristics at T_A = 25 °C
Parameter
Symbol
Min.
Transition frequency
f_T
31
Collector base capacitance
C_CB
–
Collector emitter capacitance
C_CE
–
Emitter base capacitance
C_EB
–
Values
Typ. Max.
41
–
0.26 0.4
0.45 –
1.3
–
Unit Note / Test Condition
GHz
pF
pF
pF
V_CE = 3 V, I_C = 70 mA,
f = 1 GHz
V_CB = 3 V, V_BE = 0 V
f = 1 MHz
Emitter grounded
V_CE = 3 V, V_BE = 0 V
f = 1 MHz
Base grounded
V_EB = 0.5 V, V_CB = 0 V
f = 1 MHz
Collector grounded
Data Sheet
10
Revision 1.0, 2010-10-22