BFP650_10 Datasheet, PDF (11/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP650
Electrical Characteristics
4.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, T_A = 25 °C
VC
Top View
Bias -T
E
C
OUT
VB
B
E
Bias-T
(Pin 1)
IN
Figure 2 BFP650 Testing Circuit
Table 5 AC Characteristics, V_CE = 3 V, f = 150 MHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ms
–
G_ms
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
35.5 –
38
–
35
–
37.5 –
0.75 –
32
–
16.5 –
29.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 30 mA
I_C = 70 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 70 mA
Z_S = Z_opt
I_C = 30 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 70 mA
I_C = 70 mA
Table 6 AC Characteristics, V_CE = 3 V, f = 450 MHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
G_ms
–
G_ms
–
Values
Typ. Max.
30
–
31.5 –
Data Sheet
11
Unit Note / Test Condition
dB
I_C = 30 mA
I_C = 70 mA
Revision 1.0, 2010-10-22