English
Language : 

BFP650_10 Datasheet, PDF (12/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor
BFP650
Electrical Characteristics
Table 6 AC Characteristics, VCE = 3 V, f = 450 MHz (cont’d)
Parameter
Symbol
Values
Min. Typ. Max.
Transducer gain
High linearity operation point
Class A operation point
Minimum noise figure
S21
–
29
–
S21
–
29.5 –
Minimum noise figure
Associated gain
Linearity
NFmin
–
Gass
–
0.75 –
29.5 –
1 dB gain compression point
3rd order intercept point
OP1dB
–
OIP3
–
16.5 –
30
–
Unit Note / Test Condition
dB
dB
dBm
ZS = ZL = 50 Ω
IC = 30 mA
IC = 70 mA
ZS = Zopt
IC = 30 mA
IC = 30 mA
ZS = ZL = 50 Ω
IC = 70 mA
IC = 70 mA
Table 7 AC Characteristics, VCE = 3 V, f =900 MHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
Gms
–
Gms
–
High linearity operation point
Class A operation point
Minimum noise figure
S21
–
S21
–
Minimum noise figure
Associated gain
Linearity
NFmin
–
Gass
–
1 dB gain compression point
3rd order intercept point
OP1dB
–
OIP3
–
Values
Typ. Max.
25.5 –
26.5 –
23.5 –
24
–
0.8
–
24.5 –
17
–
31
–
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 30 mA
IC = 70 mA
ZS = ZL = 50 Ω
IC = 30 mA
IC = 70 mA
ZS = Zopt
IC = 30 mA
IC = 30 mA
ZS = ZL = 50 Ω
IC = 70 mA
IC = 70 mA
Table 8 AC Characteristics, VCE = 3 V, f =1.5 GHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
Gms
–
Gms
–
High linearity operation point
Class A operation point
Minimum noise figure
S21
–
S21
–
Minimum noise figure
NFmin
–
Values
Typ. Max.
22
–
22.5 –
19
–
19.5 –
0.85 –
Unit Note / Test Condition
dB
IC = 30 mA
IC = 70 mA
dB
ZS = ZL = 50 Ω
IC = 30 mA
IC = 70 mA
dB
ZS = Zopt
IC = 30 mA
Data Sheet
12
Revision 1.0, 2010-10-22