BFP650_10 Datasheet, PDF (21/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP650
Electrical Characteristics
1
1.5
0.5
0.4
7
8
9 ₁₀
2
6
5
0.3
4
0.2
3
0.1
2
0.03 to 10 GHz
3
4
5
10
0
0.1 0.2 0.3 0.4 0.5
1
−0.1
1 1.5 2 3 4 5
−10
−0.2
−0.3
−0.4
−0.5
−5
−4
−3
−2
−1.5
−1
70 mA
30 mA
Figure 14 Input Matching S₁₁ = f ( f ), V_CE = 3 V, I_C = 30 / 70 mA
0.5
0.4
0.3
0.2
0.1
0.45GHz
0
0.1 0.2 0.3 0.4 0.5
0.9GHz
−0.1
1.9GHz
−0.2
2.4GHz
−0.3
3.5GHz
−0.4
−0.5
1
1.5
2
1 1.5 2 3 4 5
3
4
5
10
I = 30mA
c
I = 70mA
c
−10
−5
−4
−3
−2
−1.5
−1
Figure 15 Source Impedance for Minimum Noise Figure Z_opt = f ( f ), V_CE = 3 V, I_C = 30 / 70 mA
Data Sheet
21
Revision 1.0, 2010-10-22