BFP650_10 Datasheet, PDF (14/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP650
Electrical Characteristics
Table 11 AC Characteristics, V_CE = 3 V, f =3.5GHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ma
–
G_ma
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
14
–
14.5 –
11
–
11.5 –
1.2
–
11.5 –
17
–
30
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 30 mA
I_C = 70 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 70 mA
Z_S = Z_opt
I_C = 30 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 70 mA
I_C = 70 mA
Table 12 AC Characteristics, V_CE = 3 V, f =5.5GHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ma
–
G_ma
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
10.5 –
10.5 –
6.5
–
7
–
1.6
–
8.5
–
16.5 –
29.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 30 mA
I_C = 70 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 70 mA
Z_S = Z_opt
I_C = 30 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 70 mA
I_C = 70 mA
Note:
1. AC paramter limits verified by random sampling.
2. In order to get the NF_min values stated in this chapter the test fixture losses have been subtracted from all
measured result.
3. OIP3₃ value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
14
Revision 1.0, 2010-10-22