BFP650_10 Datasheet, PDF (22/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP650
Electrical Characteristics
0.5
0.4
0.3
0.2
0.1
1
8
7
6
5
4
3
1.5
2
9 ¹⁰
0.03 to 10 GHz
2
0
0.1 0.2 0.3 0.4 0.5
1 1.5 2 3 4 5
1
−0.1
3
4
5
10
−10
−0.2
−0.3
−0.4
−0.5
−5
−4
−3
−2
−1.5
−1
70 mA
30 mA
Figure 16 Output Matching S₂₂ = f ( f ), V_CE = 3 V, I_C = 30 / 70 mA
2
1.8
1.6
1.4
1.2
1
I = 70mA
0.8
C
I = 30mA
C
0.6
0.4
0.2
0
0 0.5 1 1.5 2 2.5 3 3.5 4
f [GHz]
Figure 17 Noise Figure NF_min = f ( f ), V_CE = 3 V, I_C = 30 / 70 mA, Z_S = Z_opt
Data Sheet
22
Revision 1.0, 2010-10-22