HYB25L256160AF Datasheet, PDF (7/56 Pages) Infineon Technologies AG – 256MBit Mobile-RAM

HY[B/E]25L256160AF–7.5
256MBit Mobile-RAM
Overview
which drastically reduces the self refresh current, depending on the case temperature of the components in the
system application. In addition a “Deep Power Down Mode” is available. Operating the four memory banks in an
interleave fashion allows random access operation to occur at higher rate. A sequential and gapless data rate is
possible depending on burst length, CAS latency and speed grade of the device.
The Mobile-RAM is housed in a FBGA “chip-size” package. The Mobile-RAM is available in the commercial (0 °C
≤ TC ≤ 70 °C) and extended (–25 °C to +85 °C) temperature range.
Table 2 Ordering Information
Part Number¹⁾
HYB25L256160AF–7.5
HYE25L256160AF–7.5
Function Code
PC133–333–522
PC133–333–522
Case Temperature Range
commercial (0 °C ≤ TC ≤ 70 °C)
extended (–25 °C to +85 °C)
1) HYB/E: designator for memory components for commercial /extended temperature range
25L: Mobile-RAM at V_DD = 2.5 V
256: 256-Mbit density
160: Product variation x16
A: Die revision A
F: Lead & Halogen free
–7.5: speed grade - see Table 1
Package
P-TFBGA-54
P-TFBGA-54
Data Sheet
7
Rev. 1.2, 04-2004